Infineon advances NVIDIA collaboration on gallium nitride power converters for AI data centers

Infineon Technologies is advancing its collaboration with NVIDIA on 800 VDC power architectures for AI data centers, centered on a high-voltage intermediate bus converter (IBC) built on gallium nitride (GaN). The company says its GaN portfolio covers 800 V to 50 V, 800 V to 12 V and 800 V to 6 V conversion ratios, with switching frequencies up to 1 MHz at the IBC stage. Infineon also cites PSoC control C3 and EiceDRIVER product families as part of full IBC system solutions, building on joint work first announced in May 2025 and October 2025.

Key facts

Market context

Gallium nitride is a wide-bandgap semiconductor used in power switches that convert and regulate electricity more efficiently than conventional silicon at high voltages and switching frequencies. Its main commercial uses include fast chargers and adapters, telecom and industrial power supplies, and renewable energy inverters, while silicon carbide competes in higher-voltage applications such as electric vehicle traction inverters. Data center operators are a growing demand driver because rack power levels keep rising, pushing designs toward higher-voltage distribution and more compact conversion stages. Suppliers of GaN power devices, gate drivers and control chips typically benefit when system designers adopt new architectures, though qualification cycles with large hyperscale customers can be lengthy. For buyers, such design wins signal future volume for GaN epitaxy wafers and power device capacity, and they can shift competitive positioning among semiconductor makers that supply power stages and their associated controllers.

Source: official release on infineon.com. Summary and context written by Market Krystal.