Infineon to build high-volume 300-millimeter GaN power chip plant in Villach

admin — Tue, 27 Oct 2026 00:00:00 +0000

Infineon Technologies will invest around €1.1 billion in its existing Villach cleanroom facilities by 2034 to build a high-volume manufacturing site for gallium nitride (GaN) power semiconductors on 300-millimeter wafers, with production scheduled to start by the end of 2027. The project is supported by €319 million in state aid under the European Chips Act, following European Commission approval. Infineon says 300-millimeter wafers yield 2.3 times as many chips per wafer as 200-millimeter production.

Why it matters

Adds European volume capacity for GaN power devices used in AI data centers, energy infrastructure, e-mobility and robotics, potentially shifting supply concentration away from Asia and the United States.

Key facts

Companies	Infineon Technologies AG
Chemicals	gallium nitride (GaN)
Capacity	High-volume manufacturing on 300-millimeter wafers; 2.3 times as many chips per wafer compared with 200-millimeter production
Investment	Around €1.1 billion by 2034; €319 million in state aid under the European Chips Act
Location	Villach, Austria
Timing	27 October 2026, production scheduled to start by the end of 2027, investment by 2034
Partners	Austrian Federal Ministry for Economic Affairs, Energy and Tourism, European Commission
End uses	AI data centers, energy infrastructure, e-mobility, robotics, consumer electronics

Market context

Gallium nitride is a wide-bandgap semiconductor material used in power transistors and related devices that switch electricity more efficiently than conventional silicon, with lower losses and the ability to operate at higher frequencies. Demand is driven by power conversion in AI data center server power supplies, renewable and grid energy infrastructure, electric vehicle chargers and onboard power systems, robotics, and consumer electronics such as fast chargers. Most GaN power device volume has historically been produced in Asia and the United States, so new capacity in Europe can diversify supply for automotive and industrial buyers. Moving production to 300-millimeter wafers matters because larger wafers give more chips per wafer and typically lower unit costs as output scales, which can pressure pricing and push competitors to match wafer size and yield. Buyers of GaN devices should watch how quickly qualified volumes arrive and whether pricing follows the cost curve.

Source: official release on infineon.com. Summary and context written by Market Krystal.

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Infineon advances NVIDIA collaboration on gallium nitride power converters for AI data centers

admin — Wed, 21 Oct 2026 00:00:00 +0000

Infineon Technologies is advancing its collaboration with NVIDIA on 800 VDC power architectures for AI data centers, centered on a high-voltage intermediate bus converter (IBC) built on gallium nitride (GaN). The company says its GaN portfolio covers 800 V to 50 V, 800 V to 12 V and 800 V to 6 V conversion ratios, with switching frequencies up to 1 MHz at the IBC stage. Infineon also cites PSoC control C3 and EiceDRIVER product families as part of full IBC system solutions, building on joint work first announced in May 2025 and October 2025.

Why it matters

Demand for GaN power switches and related control and driver chips is set to rise as AI data centers adopt 800 VDC intermediate-bus architectures to handle megawatt-scale rack power.

Key facts

Companies	Infineon Technologies AG, NVIDIA
Chemicals	gallium nitride (GaN), silicon, silicon carbide
Timing	2026-10-21, May 2025, October 2025
Partners	NVIDIA
End uses	AI data centers, 800 VDC server racks, intermediate bus converters for accelerator power delivery

Market context

Gallium nitride is a wide-bandgap semiconductor used in power switches that convert and regulate electricity more efficiently than conventional silicon at high voltages and switching frequencies. Its main commercial uses include fast chargers and adapters, telecom and industrial power supplies, and renewable energy inverters, while silicon carbide competes in higher-voltage applications such as electric vehicle traction inverters. Data center operators are a growing demand driver because rack power levels keep rising, pushing designs toward higher-voltage distribution and more compact conversion stages. Suppliers of GaN power devices, gate drivers and control chips typically benefit when system designers adopt new architectures, though qualification cycles with large hyperscale customers can be lengthy. For buyers, such design wins signal future volume for GaN epitaxy wafers and power device capacity, and they can shift competitive positioning among semiconductor makers that supply power stages and their associated controllers.

Source: official release on infineon.com. Summary and context written by Market Krystal.

The post Infineon advances NVIDIA collaboration on gallium nitride power converters for AI data centers appeared first on Market Krystal.

Infineon Technologies Archives | Market Krystal

Infineon to build high-volume 300-millimeter GaN power chip plant in Villach

Key facts

Market context

Infineon advances NVIDIA collaboration on gallium nitride power converters for AI data centers

Key facts

Market context